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SCR BT152

Philips Semiconductors

Product specification

Thyristors

GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.


PINNING - TO220AB
PIN

DESCRIPTION

1

cathode

2

anode

3

gate

tab

BT152 series

QUICK REFERENCE DATA
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM

PARAMETER

MAX. MAX. MAX. UNIT

BT152Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current


400R
450

600R
650

800R
800

V

13
20
200

13
20
200

13
20
200

A
A
A

PIN CONFIGURATION

SYMBOL

tab

a

k

g

1 23

anode

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

VDRM

Repetitive peak off-state
voltages

IT(AV)
IT(RMS)
ITSM

Average on-state current
RMS on-state current
Non-repetitive peak
on-state current

I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj

CONDITIONS

half sine wave; Tmb ≤ 103 ˚C
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs

I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature

MIN.

MAX.

UNIT

-

-400R -600R -800R
4501
6501
800

V

-

13
20

A
A

-

200
220
200
200

A
A
A2s
A/µs

-40
-

5
5
5
20
0.5
150
125

A
V
V
W
W
˚C
˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997

1

Rev 1.200


Philips Semiconductors

Product specification

Thyristors

BT152 series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient

Rth j-a

CONDITIONS

MIN.

TYP.

MAX.

UNIT

-

-

1.1

K/W

-

60

-

K/W

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

IGT
IL
IH
VT
VGT

Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage

ID, IR

Off-state leakage current

VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 40 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

0.25
-

3
25
15
1.4
0.6
0.4
0.2

32
80
60
1.75
1.5
1.0

mA
mA
mA
V
V
V
mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dVD/dt

Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time

VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform gate open circuit
VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs;
ITM = 40 A
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω

200

300

-

V/µs

-

2

-

µs

-

70

-

µs

tgt
tq

March 1997

2

Rev 1.200


Philips Semiconductors

Product specification

Thyristors

25

BT152 series

Ptot / W

BT152

conduction
angle
degrees
30
60
90
120
180

20

15

Tmb(max) / C

ITSM / A

250

97.5

BT152

form
factor

a

a = 1.57

4
2.8
2.2
1.9
1.57

1.9

103

200

108.5

150

114

100

time
T
Tj initial = 25 C max

2.2
2.8

ITSM

IT

4
10

119.5

5

0

0

5

50

125
15

10

0

IT(AV) / A

Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).

1000

10
100
Number of half cycles at 50Hz

1000

Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

BT152

ITSM / A

1

50

BT152

IT(RMS) / A

dI T /dt limit

40

30
100

20
I TSM

IT

10

time

T

Tj initial = 25 C max
10
10us

100us

0
0.01

10ms

1ms

0.1
1
surge duration / s

T/s

Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.

25

Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 103˚C.

BT152

IT(RMS) / A

1.6
103 C

20

10

VGT(Tj)
VGT(25 C)

BT151

1.4
1.2

15

1
10

0.8
5

0
-50

0.6
0

50
Tmb / C

100

0.4
-50

150

Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.

March 1997

0

50
Tj / C

100

150

Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

3

Rev 1.200


Philips Semiconductors

Product specification

Thyristors

3

BT152 series

IGT(Tj)
IGT(25 C)

50

BT152

BT152

IT / A
Tj = 125 C
Tj = 25 C

2.5

40

2

30

Vo = 1.12 V
Rs = 0.015 ohms

max

typ

1.5
20

1
10

0.5
0
-50

0

50
Tj / C

100

0

150

Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

3

IL(Tj)
IL(25 C)

0

0.5

1
VT / V

1.5

2

Fig.10. Typical and maximum on-state characteristic.

10

BT145

2.5

BT152

Zth j-mb (K/W)

1

2
0.1

1.5

P
D

1

tp

0.01

0.5

t

0
-50

0

50
Tj / C

100

0.001
10us

150

IH(Tj)
IH(25 C)

1ms

10ms
tp / s

0.1s

1s

10s

Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.

3

0.1ms

10000

BT152

dVD/dt (V/us)

2.5
RGK = 100 Ohms

1000

2

gate open circuit

1.5
100

1
0.5
0
-50

0

50
Tj / C

100

10

150

50

100

150

Tj / C

Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.

March 1997

0

4

Rev 1.200


Philips Semiconductors

Product specification

Thyristors

BT152 series

MECHANICAL DATA
Dimensions in mm

4,5
max

Net Mass: 2 g

10,3
max
1,3

3,7
2,8

5,9
min

15,8
max

3,0 max
not tinned

3,0

13,5
min
1,3
max 1 2 3
(2x)

0,9 max (3x)

2,54 2,54

0,6
2,4

Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

March 1997

5

Rev 1.200


Philips Semiconductors

Product specification

Thyristors

BT152 series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

March 1997

6

Rev 1.200


This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.



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