Tải bản đầy đủ

FGA N120 ANTD

FGA25N120ANTD/FGA25N120ANTD_F109
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient

Description

• Low Saturation Voltage: VCE(sat), typ = 2.0 V 
@ IC = 25 A and TC = 25C

Using Fairchild®'s proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating,
microwave oven.

• Low Switching Loss: Eoff, typ = 0.96 mJ 
@ IC = 25 A and TC = 25C
• Extremely Enhanced Avalanche Capability

Applications

• Induction Heating, Microwave Oven

C

G

TO-3P

G C E

E

Absolute Maximum Ratings
Symbol

Description

VCES

Collector-Emitter Voltage

VGES

Gate-Emitter Voltage

IC

Collector Current

@ TC = 25C

Collector Current

@ TC = 100C

ICM (1)

Pulsed Collector Current

IF


Diode Continuous Forward Current

IFM

Diode Maximum Forward Current

PD

Maximum Power Dissipation
Maximum Power Dissipation

FGA25N120ANTD

Unit

1200

V

 20

V

50

A

@ TC = 100C

25

A

90

A

25

A

150

A

@ TC = 25C

312

W

@ TC = 100C

125

W

TJ

Operating Junction Temperature

-55 to +150

C

Tstg

Storage Temperature Range

-55 to +150

C

TL

Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds

300

C

Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol

Parameter

Typ.

Max.

Unit

RJC(IGBT)

Thermal Resistance, Junction-to-Case

--

0.4

C/W

RJC(DIODE)

Thermal Resistance, Junction-to-Case

--

2.0

C/W

RJA

Thermal Resistance, Junction-to-Ambient

--

40

C/W

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

1

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

April 2013


Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FGA25N120ANTD

FGA25N120ANTD

TO-3P

-

-

30

Electrical Characteristics of the IGBT
Symbol

Parameter

TC = 25°C unless otherwise noted

Test Conditions

Min.

Typ.

Max.

Unit


Off Characteristics
ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0V

--

--

3

mA

IGES

G-E Leakage Current

VGE = VGES, VCE = 0V

--

--

± 250

nA


On Characteristics
VGE(th)

G-E Threshold Voltage

IC = 25mA, VCE = VGE

VCE(sat)

Collector to Emitter
Saturation Voltage

IC = 25A,

3.5

5.5

7.5

V

VGE = 15V

--

2.0

--

V

IC = 25A, VGE = 15V,
TC = 125C

--

2.15

--

V

IC = 50A,

--

2.65

--

V

--

3700

--

pF

--

130

--

pF

--

80

--

pF

VGE = 15V


Dynamic Characteristics
Cies

Input Capacitance

Coes

Output Capacitance

Cres

Reverse Transfer Capacitance

VCE = 30V, VGE = 0V,
f = 1MHz


Switching Characteristics
td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Eon

Turn-On Switching Loss

Eoff

Turn-Off Switching Loss

Ets

Total Switching Loss

td(on)

Turn-On Delay Time

VCC = 600 V, IC = 25A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25C

VCC = 600 V, IC = 25A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125C

--

50

--

ns

--

60

--

ns

--

190

--

ns

--

100

--

ns

--

4.1

--

mJ

--

0.96

--

mJ

--

5.06

--

mJ

--

50

--

ns

--

60

--

ns

--

200

--

ns

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

--

154

--

ns

Eon

Turn-On Switching Loss

--

4.3

--

mJ

Eoff

Turn-Off Switching Loss

--

1.5

--

mJ

Ets

Total Switching Loss

--

5.8

--

mJ

Qg

Total Gate Charge

Qge

Gate-Emitter Charge

Qgc

Gate-Collector Charge

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

VCE = 600 V, IC = 25A,
VGE = 15V

2

--

200

--

nC

--

15

--

nC

--

100

--

nC

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Package Marking and Ordering Information


C

Symbol
VFM
trr
Irr
Qrr

= 25°C unless otherwise noted

Parameter
Diode Forward Voltage
Diode Reverse Recovery Time

Test Conditions
IF = 25A
IF = 25A
dI/dt = 200 A/s

Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

3

Min.

Typ.

Max.

Unit

TC = 25C

--

2.0

3.0

V

TC = 125C

--

2.1

--

TC = 25C

--

235

350

TC = 125C

--

300

--

TC = 25C

--

27

40

TC = 125C

--

31

--

TC = 25C

--

3130

4700

TC = 125C

--

4650

--

ns
A
nC

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Electrical Characteristics of DIODE T


Figure 1. Typical Output Characteristics
180

20V

TC = 25C

120

15V 12V

17V

160

Figure 2. Typical Saturation Voltage
Characteristics

10V

Common Emitter
VGE = 15V

100

TC = 25C

Collector Current, IC [A]

Collector Current, IC [A]

140
120
9V

100
80

8V

60
40

60

40

20

7V

20

TC = 125C
80

VGE = 6V

0

0
0

2

4

6

8

10

0

Collector-Emitter Voltage, VCE [V]

20

Common Emitter
VGE = 15V

2.5

Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

3

40A

IC = 25A

2.0

4

5

Figure 4. Saturation Voltage vs. VGE

1.5

Common Emitter
TC = -40C

16

12

8

4

40A
25A

IC = 12.5A

0
25

50

75

100

125

0

4

Case Temperature, TC [C]

20

12

16

20

Figure 6. Saturation Voltage vs. VGE
20

Common Emitter
TC = 25C

Collector-Emitter Voltage, VCE [V]

16

12

8
40A
25A

4

8

Gate-Emitter Voltage, VGE [V]

Figure 5. Saturation Voltage vs. VGE

Collector-Emitter Voltage, VCE [V]

2

Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0

1

IC = 12.5A

0

Common Emitter
TC = 125C

16

12

8
40A
25A

4
IC = 12.5A
0

0

4

8

12

16

20

0

Gate-Emitter Voltage, VGE [V]

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

4

8

12

16

20

Gate-Emitter Voltage, VGE [V]

4

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Typical Performance Characteristics


(Continued)

Figure 7. Capacitance Characteristics
5000
4500

Figure 8. Turn-On Characteristics vs. Gate
Resistance

Common Emitter
VGE = 0V, f = 1MHz

Ciss

TC = 25C

4000

100

Switching Time [ns]

Capacitance [pF]

3500
3000
2500
2000
1500

tr

td(on)
Common Emitter
VCC = 600V, VGE = 15V

1000

IC = 25A

Coss

TC = 25C

500

TC = 125C

Crss

0

10

1

10

0

10

20

Collector-Emitter Voltage, VCE [V]

30

40

50

60

70

Gate Resistance, RG [ ]

Figure 9. Turn-Off Characteristics vs.
Gate Resistance

Figure 10. Switching Loss vs. Gate Resistance

1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25C

10

TC = 125C

Switching Loss [mJ]

Switching Time [ns]

td(off)

100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A

Eon

Eoff
1

TC = 25C
TC = 125C
10
0

10

20

30

40

50

60

70

0

10

Gate Resistance, RG [ ]

20

30

40

50

60

70

Gate Resistance, RG [ ]

Figure 11. Turn-On Characteristics vs.
Collector Current

Figure 12. Turn-Off Characteristics vs.
Collector Current

Common Emitter
VGE = 15V, RG = 10
TC = 25C
td(off)
tr

Switching Time [ns]

Switching Time [ns]

TC = 125C
100

td(on)

100

tf

Common Emitter
VGE = 15V, RG = 10
TC = 25C
TC = 125C

10

20

30

40

50

10

Collector Current, IC [A]

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

20

30

40

50

Collector Current, IC [A]

5

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Typical Performance Characteristics


(Continued)

Figure 13. Switching Loss vs. Collector Current

Figure 14. Gate Charge Characteristics
16

Common Emitter
VGE = 15V, RG = 10

Gate-Emitter Voltage, VGE [V]

10

TC = 125C

Switching Loss [mJ]

Common Emitter
RL = 24

14

Eon

TC = 25C

Eoff
1

0.1

TC = 25C
12

600V

Vcc = 200V

400V

10
8
6
4
2
0

10

20

30

40

50

0

20

40

Collector Current, IC [A]

60

80

100

120

140

160

180

200

Gate Charge, Qg [nC]

Figure 15. SOA Characteristics

Figure 16. Turn-Off SOA
100

Ic MAX (Pulsed)

100

50s
Ic MAX (Continuous)

Collector Current, IC [A]

Collector Current, Ic [A]

100s
10
1ms
DC Operation
1

Single Nonrepetitive
Pulse TC = 25C

0.1

10

Curves must be derated
linearly with increase
in temperature
0.01

Safe Operating Area
VGE = 15V, TC = 125C

1
0.1

1

10

100

1000

1

Collector - Emitter Voltage, VCE [V]

10

100

1000

Collector-Emitter Voltage, VCE [V]

Figure 17. Transient Thermal Impedance of IGBT
0
1

1
1

]
c
j
h
t
Z
[
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T

0.5

.
0

0.2
0.1
Pdm

0.05

1
0
.
0

t1

0.02

t2

0.01
single pulse

0
1

1

1
.
0

1
0
.
0

3
E
1

4
E
1

5
E
31
E
1

Duty factor D = t1 / t2
Peak Tj = Pdm  Zthjc + TC

]
c
e
s
[
n
o
i
t
a
r
u
D
e
s
l
u
P
r
a
l
u
g
n
a
t
c
e
R

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

6

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Typical Performance Characteristics


(Continued)

Figure 18. Forward Characteristics

Figure 19. Reverse Recovery Current
30

Reverse Recovery Currnet , Irr [A]

Forward Current , IF [A]

50

10

TJ = 125C

1

TJ = 25C

TC = 125C
TC = 25C

0.1
0.0

0.4

0.8

1.2

1.6

25

di/dt = 200A/s

20

15
di/dt = 100A/s
10

5

0
5

2.0

Figure 20. Stored Charge

15

20

25

Figure 21. Reverse Recovery Time

4000

300

Reverse Recovery Time , trr [ns]

Stored Recovery Charge , Qrr [nC]

10

Forward Current , IF [A]

Forward Voltage , VF [V]

3000
di/dt = 200A/s

2000
di/dt = 100A/s
1000

di/dt = 100A/s

200
di/dt = 200A/s

100

0

0
5

10

15

20

5

25

Forward Current , IF [A]

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

10

15

20

25

Forward Current , IF [A]

7

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Typical Performance Characteristics


FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

Mechanical Dimensions

TO-3PN

Dimensions in Millimeters

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

8

www.fairchildsemi.com


*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64

©2006 Fairchild Semiconductor Corporation

FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0

9

www.fairchildsemi.com

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
Sync-Lock™
FPS™
®
AccuPower™
F-PFS™
®*
®
®
®
AX-CAP *
FRFET
PowerTrench
SM
BitSiC™
Global Power Resource
PowerXS™
TinyBoost™
Build it Now™
Green Bridge™
Programmable Active Droop™
TinyBuck™
CorePLUS™
Green FPS™
QFET®
TinyCalc™
CorePOWER™
QS™
Green FPS™ e-Series™
TinyLogic®
CROSSVOLT™
Quiet Series™
Gmax™
TINYOPTO™
CTL™
RapidConfigure™
GTO™
TinyPower™
Current Transfer Logic™
IntelliMAX™

TinyPWM™
®
DEUXPEED
ISOPLANAR™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK®
SignalWise™
and Better™
TriFault Detect™
SmartMax™
EfficentMax™
MegaBuck™
TRUECURRENT®*
SMART START™
ESBC™
MICROCOUPLER™
SerDes™
Solutions for Your Success™
MicroFET™
®
SPM®
MicroPak™
STEALTH™
MicroPak2™
Fairchild®
UHC®
SuperFET®
MillerDrive™
Fairchild Semiconductor®
Ultra
FRFET™
SuperSOT™-3
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-6
mWSaver™
FACT®
VCX™
SuperSOT™-8
OptoHiT™
FAST®
VisualMax™
SupreMOS®
OPTOLOGIC®
FastvCore™
VoltagePlus™
OPTOPLANAR®
SyncFET™
FETBench™
XS™



Tài liệu bạn tìm kiếm đã sẵn sàng tải về

Tải bản đầy đủ ngay

×