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TLP521−1,TLP521−2,TLP521−4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP521−
−1,TLP521−
−2,TLP521−
−4
Programmable Controllers
AC/DC−Input Module
Solid State Relay

Unit in mm

The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP521−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP521−4 provides four isolated channels in a
sixteen plastic DIP package.
·

Collector−emitter voltage: 55 V (min)


·

Current transfer ratio: 50% (min)

TOSHIBA

11−5B2

Weight: 0.26 g

Rank GB: 100% (min)
·

Isolation voltage: 2500 Vrms (min)

·

UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349

Pin Configurations (top view)

TLP521-2

TLP521-1

TLP521-4

1

4

1

8

1


16

2

3

2

7

2

15

3

6

3

14

4

5

4

13

5

12

6

11

7

10

8

9

TOSHIBA

11−10C4

Weight: 0.54 g
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector

1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector

: Anode
1, 3, 5, 7
: Cathode
2, 4, 6, 8
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector

1

TOSHIBA

11−20A3

Weight: 1.1 g

2002-09-25


TLP521−1,TLP521−2,TLP521−4
Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Forward current

Detector

LED

Forward current derating

Symbol

TLP521-1

TLP521-2
TLP521-4

Unit

IF

70

50

mA

∆IF /°C

-0.93 (Ta ≥ 50°C)

-0.5 (Ta ≥ 25°C)

mA /°C

Pulse forward current

IFP

1 (100µ pulse, 100pps)

A

Reverse voltage

VR

5

V

Junction temperature

Tj

125

°C

Collector-emitter voltage

VCEO

55

V

Emitter-collector valtage

VECO

7

V

Collector current

IC

50

mA

Collector power dissipation
(1 circuit)

PC

150

100

mW

∆PC /°C

-1.5

-1.0

mW /°C

Collector power dissipation
derating (1 circuit Ta ≥ 25°C)
Junction temperature

Tj

125

°C

Storage temperature range

Tstg

-55~125

°C

Operating temperature range

Topr

-55~100

°C

Lead soldering temperature

Tsol

260 (10 s)

°C

Total package power dissipation

PT

250

150

mW

Total package power dissipation
derating (Ta ≥ 25°C)

∆PT /°C

-2.5

-1.5

mW /°C

Isolation voltage

BVS

2500 (AC, 1min., R.H.≤ 60%)

(Note 1)

Vrms

(Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.

Recommended Operating Conditions
Characteristic

Symbol

Min

Typ.

Max

Unit

Supply voltage

VCC



5

24

V

Forward current

IF



16

25

mA

Collector current

IC



1

10

mA

Topr

-25



85

°C

Operating temperature

2

2002-09-25


TLP521−1,TLP521−2,TLP521−4

Type

TLP521

TLP521-2
TLP521-4

Classification (*1)

Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Min
Max

Marking Of
Classification

A

50

600

Blank, Y, Y■, G, G■, B, B■, GB

Rank Y

50

150

Y, Y■

Rank GR

100

300

G, G■

Rank BL

200

600

B, B■

Rank GB

100

600

G, G■, B, B■, GB

A

50

600

Blank, GR, BL, GB

Rank GB

100

600

GR, BL, GB

*1: Ex. rank GB: TLP521-1 (GB)
(Note): Application type name for certification test, please use standard product type name, i.e.
TLP521-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2

3

2002-09-25


TLP521−1,TLP521−2,TLP521−4
Individual Electrical Characteristics (Ta = 25°C)

Detector

LED

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

VF

IF = 10 mA

1.0

1.15

1.3

V

Reverse current

IR

VR = 5 V





10

µA

Capacitance

CT

V = 0, f = 1 MHz



30



pF

Collector-emitter
breakdown voltage

V(BR) CEO

IC = 0.5 mA

55





V

Emitter-collector
breakdown voltage

V(BR) ECO

IE = 0.1 mA

7





V

VCE = 24 V



10

100

nA

VCE = 24 V, Ta = 85°C



2

50

µA

V = 0, f = 1 MHz



10



pF

MIn

Typ.

Max

Unit

50



600

100



600

Collector dark current

ICEO

Capacitance
(collector to emitter)

CCE

Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio

Saturated CTR

Collector-emitter
saturation voltage

Symbol
IC / IF

IC / IF (sat)

VCE (sat)

Test Condition
IF = 5 mA, VCE = 5 V
Rank GB

%

IF = 1 mA, VCE = 0.4 V
Rank GB



60



30





IC = 2.4 mA, IF = 8 mA





0.4

IC = 0.2 mA, IF = 1 mA
Rank GB



0.2







0.4

Min

Typ.

Max

Unit

%

V

Isolation Characteristics (Ta = 25°C)
Characteristic

Symbol

Test Condition

Capacitance
(input to output)

CS

VS = 0, f = 1 MHz



0.8



pF

Isolation resistance

RS

VS = 500 V, R.H.≤ 60%



1011





2500





AC, 1 second, in oil



5000



DC, 1 minute, in oil



5000



AC, 1 minute
Isolation voltage

BVS

4

Vrms
Vdc

2002-09-25


TLP521−1,TLP521−2,TLP521−4
Switching Characteristics (Ta = 25°C)
Characteristic

Symbol

Rise time

Test Condition

Min

Typ.

Max



2





3





3



tr

Fall time

tf

Turn-on time

ton

VCC = 10 V
IC = 2 mA
RL = 100Ω

Turn-off time

toff



3



Turn-on time

tON



2



Storage time

ts



15



Turn-off time

tOFF



25



Fig.1 : SWITCHING
IF

TIME

RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA

Unit

µs

µs

TEST CIRCUIT
IF
RL

VCC

tS

VCE

5

VCE

4.5V
0.5V

tON

tOFF

VCC

2002-09-25


TLP521−1,TLP521−2,TLP521−4

IF – Ta
100

80

80

Allowable forward current
IF (mA)

Allowable forward current
IF (mA)

TLP521-1
100

60

40

20

TLP521-2
TLP521-4

60

40

20

0
-20

0

20

40

60

0
-20

100

80

0

Ambient temperature Ta (°C)

240

20

120

60

80

100

TLP521-2
TLP521-4

80

100

PC – Ta

100

Allowable collector power
dissipation PC (mW)

200

160

120

80

80

60

40

20

40

0
-20

0

20

40

60

80

0
-20

100

0

IFP – DR

TLP521-1
3000

20

3000

Pulse width ≤ 100µs

TLP521-2
TLP521-4

Pulse width ≤ 100µs
Ta = 25°C

Allowable pulse forward
current IFP (mA)

1000
500
300

100
50
30

10-3

3

10-2

3

60

IFP – DR

Ta = 25°C

10
3

40

Ambient temperature Ta (°C)

Ambient temperature Ta (°C)

Allowable pulse forward
current IFP (mA)

40

Ambient temperature Ta (°C)

PC – Ta

TLP521-1

Allowable collector power
dissipation PC (mW)

IF – Ta

10-1

3

1000
500
300

100
50
30

10
3

100

Duty cycle ratio DR

10-3

3

10-2

3

10-1

3

100

Duty cycle ratio DR

6

2002-09-25


TLP521−1,TLP521−2,TLP521−4

100

∆VF/∆Ta – IF

IF – VF
Ta=25°C

-2.8

Forward voltage temperature
coefficient ∆VF/∆Ta (mV/°C)

50

Forward current IF

(mA)

30

10
5
3

1
0.5

0.1
0.4

0.8

0.6

1.0

Forward voltage

1.4

1.2

VF

1

10

(µA)

10
5
3

10

10

10

10

10
0.8

1.2

1.6

2.0

Pulse forward voltage VFP

0

-1

-2

-3

-4

2.4

0

80

40

(V)

IC – VCE
50mA

(mA)
Collector current

Collector current

30mA
20mA
15mA
PC(MAX.)

10mA
20

IF=5mA

4

40mA
30mA

20

20mA

15

10mA

10

5mA

Ta=25°C

IC

50mA

IC

(mA)

60

2

160

120

Ambient temperature Ta (℃)

Ta=25°C

0

10V
5V

VCE=24V

25

0

IF (mA)

1

IC – VCE
80

40

30

10

ICEO – Ta

30

0.4

3

Forward current

Collector dark current ICEO

(mA)
IFP

0.3

(V)

500 Repetitive frequency =100Hz
300 Ta = 25°C

Pulse forward current

-1.2

-0.4
0.1

1.6

Pulse width ≤10µs

1
0

-1.6

IFP – VFP

1000

50

-2.0

-0.8

0.3

100

-2.4

8

6

Collector-emitter voltage

VCE

5

0
0

10

(V)

IF=2mA

0.2

0.4

0.6

0.8

Collector-emitter voltage

7

1.0

VCE

1.2

1.4

(V)

2002-09-25


TLP521−1,TLP521−2,TLP521−4

IC – IF

100

300

Collector current

Current transfer ratio
IC /IF (%)

IC

(mA)

30

10
Sample

IC/IF – IF

500

Ta = 25°C
VCE=5V
50
VCE=0.4V

A

5
3
Sample

B

Sample

100
Sample

30

Ta = 25°C
VCE=5V
VCE=0.4V

5
0.3

1

0.5
0.3

Collector-emitter saturation
voltage VCE(sat) (V)

0.1
0.05
0.03
0.3

10

IF

30

100

(mA)

1

3

10

Forward current

IF

30

100

(mA)

IF = 5mA
IC = 1mA

0.16

0.12

0.08

0.04

0

-20

0

100
1000
500

10mA

300

1mA

IF = 0.5mA

(µs)

3

100

Switching time

5

50

tS

30

10

3

0

20

100

5

0.3

-20

80

tOFF

10

0.5

60

Ta = 25°C
IF = 16mA
VCC= 5V

5mA

1

40

RL – Switching Time

VCE = 5V

25mA
50
30

20

Ambient temperature Ta (℃)

IC – Ta

IC (mA)

3

Forward current

VCE(sat) – Ta
0.20

Collector current

B

50

10

1

0.1

A

40

60

80

1
1

100

tON

3

10

30

100

300

Load resistance RL (kΩ)

Ambient temperature Ta (℃)

8

2002-09-25


TLP521−1,TLP521−2,TLP521−4

RESTRICTIONS ON PRODUCT USE

000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.

9

2002-09-25


This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.



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